- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 361
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HI SIDE RESET 8-SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 200ns,25ns | - | 200mA,400mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE RESET 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 200ns,25ns | - | 200mA,400mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE RESET 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 200ns,25ns | - | 200mA,400mA | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A CMOS 8-SOIC
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Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A CMOS 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
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- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 5A,5A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 5A,5A |