Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 1,193
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX626ESA+
Maxim Integrated
6
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A
TSC426CPA+
Maxim Integrated
25
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER MOSFET DUAL 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 1.5A,1.5A
IX4426NTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 1.5A,1.5A
IX4428NTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DRIVER 1.5A 8SOIC
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 1.5A,1.5A
IX4426MTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 2000  MPQ: 1
IC MOSFET DVR INV 1.5A 8-DFN
Tape & Reel (TR) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 1.5A,1.5A
IX4426MTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV 1.5A 8-DFN
Cut Tape (CT) - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 1.5A,1.5A
IX4426MTR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR INV 1.5A 8-DFN
- - 4.5 V ~ 30 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN (3x3) Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,8ns 1.5A,1.5A
LM5114BMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET GATE DVR 7.6A SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5114BSDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC MOSFET GATE DRVR 7.6A 6WSON
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 82ns,12.5ns 1.3A,7.6A
LM5134BSDX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC GATE DRVR 7.6A LSIDE 6WQFN
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) 6-WDFN Exposed Pad 6-WSON (3x3) Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 3ns,2ns 4.5A,7.6A
LM5134BMFX/NOPB
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR 7.6A LSIDE SOT23-6
Tape & Reel (TR) - 4 V ~ 12.6 V -40°C ~ 125°C (TJ) SOT-23-6 SOT-23-6 Surface Mount Inverting,Non-Inverting Single Low-Side 1 N-Channel MOSFET - 3ns,2ns 4.5A,7.6A
ISL89411IPZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRVR MOSFET DUAL-CH 8DIP
Bulk - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
ISL89412IBZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR MOSFET DUAL-CH 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
ISL89411IBZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR MOSFET DUAL-CH 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
ISL89410IBZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR MOSFET DUAL-CH 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 18 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7202CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7212CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7222CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7252CSZ-T13
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 2A,2A
EL7252CSZ-T7
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRIVER MOSFET DUAL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 2A,2A