- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Conditions sélectionnées:
Découvrez les produits 102
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A | ||
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|
|
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
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Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
3,585
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 4A，4A | ||
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Renesas Electronics America Inc. |
27,296
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 3.5A，3.5A | ||
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|
|
Renesas Electronics America Inc. |
2,650
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC PIN DRIVER 40MHZ 3ST 8SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 3.5A，3.5A | ||
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|
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Texas Instruments |
3,833
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns，2ns | 4.5A，7.6A | ||
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|
|
Renesas Electronics America Inc. |
8,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 2A，2A | ||
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Maxim Integrated |
6,638
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
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Maxim Integrated |
3,119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
- | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
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|
|
Renesas Electronics America Inc. |
258
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DVR 40MHZ 3ST 8SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 3.5A，3.5A | ||
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Diodes Incorporated |
3,076
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，12ns | 1.5A，2.5A | ||
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
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|
|
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
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|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
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|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A |
