Fabricant:
Supplier Device Package:
Input Type:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 11
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
UCC27712DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
700V GATE DRIVER
Tape & Reel (TR) - -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Cut Tape (CT) - -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712DR
Texas Instruments
3,084
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
- - -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
UCC27712QDRQ1
Tape & Reel (TR) Automotive,AEC-Q100 -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
Cut Tape (CT) Automotive,AEC-Q100 -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712QDRQ1
Texas Instruments
2,201
3 jours
-
MOQ: 1  MPQ: 1
UCC27712QDRQ1
- Automotive,AEC-Q100 -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
UCC27712QDQ1
Texas Instruments
963
3 jours
-
MOQ: 1  MPQ: 1
700V GATE DRIVER
Tube Automotive,AEC-Q100 -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A
DGD2136S28-13
Diodes Incorporated
Enquête
-
-
MOQ: 1500  MPQ: 1
HV GATE DRIVER SO-28
Tape & Reel (TR) - -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SO Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,35ns 200mA,350mA
DGD2136S28-13
Diodes Incorporated
1,204
3 jours
-
MOQ: 1  MPQ: 1
HV GATE DRIVER SO-28
Cut Tape (CT) - -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SO Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,35ns 200mA,350mA
DGD2136S28-13
Diodes Incorporated
1,204
3 jours
-
MOQ: 1  MPQ: 1
HV GATE DRIVER SO-28
- - -40°C ~ 150°C (TJ) 28-SOIC (0.295",7.50mm Width) 28-SO Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,35ns 200mA,350mA
UCC27712D
Texas Instruments
903
3 jours
-
MOQ: 1  MPQ: 1
620-V,1.8-A,2.8-A HIGH-SIDE LO
Tube - -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC - Synchronous High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A