- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 746
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting,Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting,Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Inverting,Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
8,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A | ||||
Renesas Electronics America Inc. |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
3,585
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
3,585
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 7.5ns,10ns | 2A,2A | ||||
Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 2A,2A | ||||
Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 2A,2A | ||||
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 25ns,20ns | 2A,2A | ||||
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
2,094
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | 2 | N-Channel,P-Channel MOSFET | 10ns,8ns | 1.5A,1.5A |