- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 400
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
13,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
13,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL HS 8-SOIC
|
- | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
6,638
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
536
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
140
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
1,293
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Surface Mount | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Surface Mount | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
Diodes Incorporated |
1,204
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HV GATE DRIVER SO-28
|
- | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SO | Surface Mount | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，35ns | 200mA，350mA | ||
|
|
|
IXYS Integrated Circuits Division |
376
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A |
