- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 175
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
952
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
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Maxim Integrated |
259
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL NONINV 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
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Maxim Integrated |
200
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
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Maxim Integrated |
2,350
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
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Maxim Integrated |
1,523
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
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Maxim Integrated |
103
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL NONINV 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
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|
|
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR DUAL HS 8DIP
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Maxim Integrated |
201
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR INV/NONINV 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
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|
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Maxim Integrated |
322
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRV SGL 6A HS 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
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|
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Renesas Electronics America Inc. |
771
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR SNGL 8-DIP
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Bulk | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
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|
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Renesas Electronics America Inc. |
531
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8-DIP
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Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 2A，2A | ||
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Maxim Integrated |
55
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
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|
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Maxim Integrated |
92
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
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|
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Maxim Integrated |
76
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
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|
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Maxim Integrated |
31
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | ||
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Maxim Integrated |
100
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
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Maxim Integrated |
25
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2000 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRVR DUAL INV 8-DIP
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Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 100 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A |
