- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 583
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
4,635
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
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Maxim Integrated |
3,509
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR MOSFET DUAL NON-INV 8SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER PIN 40MHZ 3STATE 8SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
2,579
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
- | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
7,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
- | 4.5 V ~ 12 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 12ns，12.2ns | 12A，12A | ||
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|
|
IXYS Integrated Circuits Division |
2,094
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A | ||
|
|
|
IXYS Integrated Circuits Division |
2,089
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
5,790
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
1,303
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HS DUAL MOSFET 8-SOIC
|
- | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
506
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV DUAL NONINV 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
- | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 4A，4A | ||
|
|
|
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A HS 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A |
