- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 86
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
135
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET QUAD 18-SOIC
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Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
61
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET QUAD 18-DIP
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Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
45
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET DUAL 20-TQFN
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Tube | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 16ns，14ns | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC DRVR MOSFET DUAL 20-TQFN
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Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 20-WFQFN Exposed Pad | 20-TQFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 16ns，14ns | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC DRVR MOSFET QUAD 18-SOIC
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DVR MOSFET QUAD HI-SIDE 18DIP
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Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18SOIC
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Tube | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Through Hole | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18SOIC
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Tube | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 152 MPQ: 1
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IC DRIVER MOSFET QUAD HS 20-SOIC
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER MOSFET QUAD HS 20-SOIC
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Tape & Reel (TR) | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 152 MPQ: 1
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IC DRIVER MOSFET QUAD HS 20-SOIC
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Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRIVER MOSFET QUAD HS 20-SOIC
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Tape & Reel (TR) | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRVR MOSFET QUAD 18-SOIC
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Tape & Reel (TR) | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DRVR MOSFET QUAD 18-SOIC
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Tape & Reel (TR) | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-SOIC (0.295"，7.50mm Width) | 18-SOIC | Surface Mount | Non-Inverting | Independent | High-Side | N-Channel MOSFET | 1.7μs，2.5μs | - | ||
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Microchip Technology |
7,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Tape & Reel (TR) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | 15ns，15ns | 1.2A，1.2A | |||
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Microchip Technology |
7,711
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Cut Tape (CT) | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | 15ns，15ns | 1.2A，1.2A | |||
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Microchip Technology |
2,670
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 16SOIC
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Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | 15ns，15ns | 1.2A，1.2A | |||
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Microchip Technology |
226
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 16-SOIC
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Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | 14ns，13ns | 1.2A，1.2A |
