- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 402
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Driven Configuration | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
6,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Renesas Electronics America Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
2,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS 1-CH 8-SOIC
|
- | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
27,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
4,042
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER PIN 40MHZ 3STATE 8SOIC
|
Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT | 14.5ns，15ns | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
7,703
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR PIN 40MHZ 3STATE 8-SOIC
|
Tube | - | 4.5 V ~ 12 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | High-Side or Low-Side | IGBT | 12ns，12.2ns | 12A，12A | ||
|
|
|
Texas Instruments |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 3ns，2ns | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 3ns，2ns | 4.5A，7.6A | ||
|
|
|
Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 3ns，2ns | 4.5A，7.6A | ||
|
|
|
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Maxim Integrated |
3,119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Maxim Integrated |
3,119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6-TDFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | Inverting，Non-Inverting | Low-Side | N-Channel MOSFET | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
1,937
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR HS 8-SOIC
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Low-Side | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A |
