- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 174
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
|
|
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
259
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
2,350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL 6A HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
1,523
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
322
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRV SGL 6A HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
|
|
|
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 10ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
55
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET SNGL 6A HS 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | 25ns，25ns | 6A，6A | ||
|
|
|
Maxim Integrated |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
76
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
31
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
100
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
|
Bulk | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRVR DUAL INV 8-DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | 25ns，20ns | 2A，2A |
