Découvrez les produits 42
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
EL7155CSZ-T7
Renesas Electronics America Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7155CSZ-T7
Renesas Electronics America Inc.
2,650
3 jours
-
MOQ: 1  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8SOIC
Cut Tape (CT) - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7155CSZ-T7
Renesas Electronics America Inc.
2,650
3 jours
-
MOQ: 1  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8SOIC
- - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7155CSZ
Renesas Electronics America Inc.
2,579
3 jours
-
MOQ: 1  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
DGD05473FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,12ns 1.5A,2.5A
DGD05473FN-7
Diodes Incorporated
3,076
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,12ns 1.5A,2.5A
DGD05473FN-7
Diodes Incorporated
3,076
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,12ns 1.5A,2.5A
DGD05463FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Tape & Reel (TR) - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2.5A
DGD05463FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
Cut Tape (CT) - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2.5A
DGD05463FN-7
Diodes Incorporated
3,000
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR HV W-DFN3030-10
- - 4.5 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 (type TH) Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2.5A
DGD0506AM10-13
Diodes Incorporated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE HV DRIVER MSOP-10
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0506AM10-13
Diodes Incorporated
2,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE HV DRIVER MSOP-10
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0506AM10-13
Diodes Incorporated
2,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE HV DRIVER MSOP-10
- - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
2,553
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0506AFN-7
Diodes Incorporated
2,553
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 17ns,12ns 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Tape & Reel (TR) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
2,845
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
Cut Tape (CT) - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 1.5A,2A
DGD0507AFN-7
Diodes Incorporated
2,845
3 jours
-
MOQ: 1  MPQ: 1
HVGATEDRIVERW-DFN3030-10
- - 8 V ~ 14 V -40°C ~ 125°C (TA) 10-WFDFN Exposed Pad W-DFN3030-10 Surface Mount CMOS/TTL Half-Bridge 2 N-Channel MOSFET 50V 16ns,18ns 1.5A,2A
UCC27712DR
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
700V GATE DRIVER
Tape & Reel (TR) - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount - High-Side or Low-Side 2 IGBT,N-Channel,P-Channel MOSFET 700V 16ns,10ns 1.8A,2.8A