- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 10
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
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4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 4A，4A | ||
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Renesas Electronics America Inc. |
3,007
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
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4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
1,927
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8-SOIC
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4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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|
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
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4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8DIP
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4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 7.5ns，10ns | 2A，2A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER ULT FAST 9A 6-DFN
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER 9A 6-DFN
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER SGL 9A 6-DFN
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC GATE DRIVER SGL 9A 6-DFN
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4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，23ns | 9A，9A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC POWER MANAGEMENT
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4.5 V ~ 18 V | 0°C ~ 70°C | Die | Die | Surface Mount | Inverting | Independent | 2 | N-Channel，P-Channel MOSFET | 25ns，25ns | 1.5A，1.5A |
