- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,193
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
4,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 4.5A,7.6A | ||||
Texas Instruments |
1,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 4.5A,7.6A | ||||
Texas Instruments |
1,133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOW SIDE 6WQFN
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns,2ns | 4.5A,7.6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Texas Instruments |
1,069
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LOSIDE SOT23-6
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 82ns,12.5ns | 1.3A,7.6A | ||||
Renesas Electronics America Inc. |
3,007
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
1,927
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET DUAL-CH 8-SOIC
|
Bulk | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
700V GATE DRIVER
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Texas Instruments |
3,084
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
- | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 2A,2A | ||||
Renesas Electronics America Inc. |
1,710
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 2A,2A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | Automotive,AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 1.8A,2.8A | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
HV GATE DRIVER SO-28
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295",7.50mm Width) | 28-SO | Surface Mount | Inverting | 3-Phase | Half-Bridge | 6 | IGBT,N-Channel MOSFET | 600V | 90ns,35ns | 200mA,350mA |