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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,193
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
Cut Tape (CT) | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
|
|
|
Diodes Incorporated |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HV W-DFN3030-10
|
- | - | 4.5 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 (type TH) | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2.5A | ||
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
- | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.5A，1.5A | ||
|
|
|
Maxim Integrated |
200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
771
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR SNGL 8-DIP
|
Bulk | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 4A，4A | ||
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|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE HV DRIVER MSOP-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,553
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 17ns，12ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Tape & Reel (TR) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
Cut Tape (CT) | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Diodes Incorporated |
2,845
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HVGATEDRIVERW-DFN3030-10
|
- | - | 8 V ~ 14 V | -40°C ~ 125°C (TA) | 10-WFDFN Exposed Pad | W-DFN3030-10 | Surface Mount | CMOS/TTL | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 50V | 16ns，18ns | 1.5A，2A | ||
|
|
|
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
|
Tape & Reel (TR) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
4,142
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DRVR 7.6A 6WSON
|
Cut Tape (CT) | - | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | 6-WDFN Exposed Pad | 6-WSON (3x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 1.3A，7.6A |
