- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 1,193
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 188 MPQ: 1
|
IC MOSFET DVR INV 1.5A 16SOIC
|
Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 188 MPQ: 1
|
IC MOSFET DVR QUAD NAND 16SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 16-SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET QUAD 1.2A 14DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -25°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-CDIP
|
Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-CDIP
|
Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 58 MPQ: 1
|
IC MOSFET DVR QUAD AND 14CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 58 MPQ: 1
|
IC MOSFET DVR AND/INV 14CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 58 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 1.2A，1.2A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 3A，3A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 56 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
|
Tube | - | 7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 87 MPQ: 1
|
IC MOSFET DVR AND/INV 14CDIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 1.2A，1.2A |
