- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,193
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
294
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
274
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
212
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
582
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 6A，6A | |||
|
|
Microchip Technology |
559
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 3A，3A | |||
|
|
Microchip Technology |
465
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 6A，6A | |||
|
|
Microchip Technology |
951
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 4.5A，4.5A | |||
|
|
Microchip Technology |
948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 4.5A，4.5A | |||
|
|
Microchip Technology |
633
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 12ns，12ns | 4.5A，4.5A | |||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 3A，3A | |||
|
|
Microchip Technology |
860
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 4.5A，4.5A | |||
|
|
Microchip Technology |
704
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.0A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 4A，4A | |||
|
|
Microchip Technology |
555
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 12A HS 8-SOIC
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 12A，12A | |||
|
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Microchip Technology |
433
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF 12A LO SIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 12A，12A | |||
|
|
Microchip Technology |
243
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 3A，3A | |||
|
|
Microchip Technology |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF 12A LO SIDE 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 12A，12A | |||
|
|
Microchip Technology |
294
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8-DIP
|
Tube | - | 4.5 V ~ 30 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 1.5A，1.5A | |||
|
|
Microchip Technology |
380
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 9A，9A | |||
|
|
Microchip Technology |
185
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 1.5A DUAL 8SOIC
|
Tube | - | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 20ns，18ns | 1.5A，1.5A |
