Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 1,193
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX628ESA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR DUAL-POWER MOSFET 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A
EL7104CS
Renesas Electronics America Inc.
Enquête
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MOQ: 582  MPQ: 1
IC PWR MOSFET DVR HS 8-SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 7.5ns,10ns 4A,4A
EL7155CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7155CS
Renesas Electronics America Inc.
Enquête
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MOQ: 485  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7156CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side or Low-Side 1 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7156CS
Renesas Electronics America Inc.
Enquête
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MOQ: 485  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7158IS
Renesas Electronics America Inc.
Enquête
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MOQ: 388  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8-SOIC
Tube - 4.5 V ~ 12 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side or Low-Side 1 IGBT - 12ns,12.2ns 12A,12A
EL7202CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7202CS
Renesas Electronics America Inc.
Enquête
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MOQ: 582  MPQ: 1
IC DVR HS DUAL MOSFET 8-SOIC
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7212CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7212CS
Renesas Electronics America Inc.
Enquête
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MOQ: 582  MPQ: 1
IC DVR HS DUAL MOSFET 8-SOIC
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7222CS
Renesas Electronics America Inc.
Enquête
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MOQ: 582  MPQ: 1
IC DVR HS DUAL MOSFET 8-SOIC
Tube - 4.5 V ~ 15 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7.5ns,10ns 2A,2A
EL7242CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 2A,2A
EL7242CS
Renesas Electronics America Inc.
Enquête
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MOQ: 582  MPQ: 1
IC DVR HS DUAL MOSFET 8-SOIC
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 2A,2A
EL7252CN
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC DVR HS DUAL MOSFET 8DIP
Tube - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 10ns,10ns 2A,2A
EL7104CS-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC DRIVER MOSFET SGL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 7.5ns,10ns 4A,4A
EL7104CS-T7
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRIVER MOSFET SGL HS 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 7.5ns,10ns 4A,4A
EL7155CS-T13
Renesas Electronics America Inc.
Enquête
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MOQ: 2500  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7155CS-T7
Renesas Electronics America Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Synchronous High-Side or Low-Side 2 IGBT - 14.5ns,15ns 3.5A,3.5A
EL7156CNZ
Renesas Electronics America Inc.
Enquête
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MOQ: 600  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8-DIP
Tube - 4.5 V ~ 16.5 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single High-Side or Low-Side 1 IGBT - 14.5ns,15ns 3.5A,3.5A