Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 1,193
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX4420CPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 6A,6A
MAX4429CPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET SNGL 6A HS 8DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 6A,6A
MAX621CPN
Maxim Integrated
Enquête
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MOQ: 1000  MPQ: 1
IC DVR MOSFET QUAD HI-SIDE 18DIP
Tube - 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs -
MAX627CSA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR MOSFET DUAL NON-INV 8SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A
TC4404MJA
Microchip Technology
Enquête
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MOQ: 56  MPQ: 1
IC MOSFET DVR 1.5A DUAL OD 8CDIP
Tube - 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 40ns,40ns (Max) 1.5A,1.5A
TC4405MJA
Microchip Technology
Enquête
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MOQ: 56  MPQ: 1
IC MOSFET DVR 1.5A DUAL OD 8CDIP
Tube - 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 40ns,40ns (Max) 1.5A,1.5A
MAX4420CSA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 6A,6A
MAX4420EPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 6A,6A
MAX4420ESA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER MOSFET 6A HS 8-SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 6A,6A
MAX4427CPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 1.5A,1.5A
MAX4427CSA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 1.5A,1.5A
MAX4427EPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 1.5A,1.5A
MAX4427ESA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DRIVER DUAL MOSFET 1.5A 8SOIC
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 1.5A,1.5A
MAX620CPN
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
Tube - 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs -
MAX620CWN
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube - 4.5 V ~ 16.5 V 0°C ~ 70°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs -
MAX620EPN
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
Tube - 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Through Hole Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs -
MAX620EWN
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18SOIC
Tube - 4.5 V ~ 16.5 V -40°C ~ 85°C (TA) 18-SOIC (0.295",7.50mm Width) 18-SOIC Surface Mount Non-Inverting Independent High-Side 4 N-Channel MOSFET - 1.7μs,2.5μs -
MAX628CPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR DUAL-POWER MOSFET 8-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A
MAX628CSA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR DUAL-POWER MOSFET 8-SOIC
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A
MAX628EPA
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC DVR DUAL-POWER MOSFET 8-DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 2A,2A