- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 771
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
3,908
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,886
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
Tube | - | 4.5 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
Tube | - | 4.5 V ~ 35 V | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,18ns | 0.8V,3V | 14A,14A | ||||
Texas Instruments |
9,183
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
IXYS Integrated Circuits Division |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 9ns,8ns | 0.8V,3V | 4A,4A | ||||
Texas Instruments |
4,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
3,074
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
IXYS Integrated Circuits Division |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
|
Tube | - | 4.5 V ~ 35 V | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Texas Instruments |
6,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Texas Instruments |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1V,2V | 9A,9A | ||||
Texas Instruments |
3,611
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 1.1V,2.7V | 9A,9A | ||||
Renesas Electronics America Inc. |
918
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16SOIC
|
Tube | - | 8.5 V ~ 15 V | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
Tube | - | 8.5 V ~ 15 V | 16-DIP (0.300",7.62mm) | 16-PDIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns,9ns | 1V,2.5V | 1.4A,1.3A | ||||
Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
Tube | - | 4.7 V ~ 18 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
3,253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
ON Semiconductor |
3,253
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS INV 8-SOIC
|
- | - | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | 0.8V,2V | 10.6A,11.4A | ||||
IXYS Integrated Circuits Division |
1,015
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
Tube | - | 4.5 V ~ 30 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 18ns,18ns | 0.8V,3V | 3A,3A |