- Series：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 119
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
10,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
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Tape & Reel (TR) | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
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Cut Tape (CT) | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
11,053
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR INV/NON 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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ON Semiconductor |
10,000
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
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Tape & Reel (TR) | - | 8 V ~ 27 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
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|
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ON Semiconductor |
12,102
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC BRIDGE DVR P-N 2A 30V 8-SOIC
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Cut Tape (CT) | - | 8 V ~ 27 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
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ON Semiconductor |
12,102
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC BRIDGE DVR P-N 2A 30V 8-SOIC
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- | - | 8 V ~ 27 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
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Texas Instruments |
2,690
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
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Tube | - | 4.5 V ~ 15 V | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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IXYS Integrated Circuits Division |
2,088
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
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Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
5,125
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPL MOSFET DRVR TO-220-5
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Tube | - | 4.7 V ~ 18 V | TO-220-5 | TO-220-5 | Through Hole | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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ON Semiconductor |
75,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
76,308
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
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Cut Tape (CT) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
76,308
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
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- | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
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|
|
IXYS Integrated Circuits Division |
2,089
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tube | - | 4.5 V ~ 30 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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|
|
IXYS Integrated Circuits Division |
1,002
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DIFF 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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|
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Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
|
Texas Instruments |
3,236
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-SOIC
|
Tube | - | 4.5 V ~ 15 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
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Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
Tube | - | 4.7 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A |
