- Packaging：
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- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 123
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,677
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3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 14A LO SIDE TO-220-5
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Tube | 4.5 V ~ 35 V | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Infineon Technologies |
1,697
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | 12 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | 12.5 V ~ 35 V | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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Texas Instruments |
5,125
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPL MOSFET DRVR TO-220-5
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Tube | 4.7 V ~ 18 V | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-DIP
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Tube | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
3,794
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL HS 4A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DVR ULT FAST 14A 8-DIP
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Tube | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Texas Instruments |
3,959
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
3,074
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
3,611
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Renesas Electronics America Inc. |
672
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET H-BRIDGE 16DIP
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Tube | 8.5 V ~ 15 V | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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Texas Instruments |
3,352
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT MOSFET DRVR 8-DIP
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Tube | 4.7 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
3,710
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL HS 4A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
2,949
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HS PWR FET DRVR 8-DIP
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Tube | 4.5 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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IXYS Integrated Circuits Division |
631
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A DUAL HS TO220-5
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Tube | 4.5 V ~ 35 V | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Texas Instruments |
527
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | 4 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Texas Instruments |
988
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR TO220-5
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Tube | 4.7 V ~ 18 V | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Renesas Electronics America Inc. |
984
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DRIVER H-BRIDGE 1A 16-DIP
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Tube | 8.5 V ~ 15 V | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
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IXYS Integrated Circuits Division |
149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
|
Tube | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A |
