- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 14
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8DIP
|
Tube | 8-DIP (0.300"，7.62mm)，6 Leads | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 4A，4A | ||
|
|
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IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DVR ULT FAST 14A 8-DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 14A，14A | ||
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|
|
IXYS Integrated Circuits Division |
149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 2A DUAL LO SIDE 8-DI
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 2A，2A | ||
|
|
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IXYS Integrated Circuits Division |
633
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A INV 8-DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 4A，4A | ||
|
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|
IXYS Integrated Circuits Division |
581
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 4A，4A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A MOSFET 8 DIP DUAL INV/NON-INV
|
Tube | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 2A，2A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
2A 8 DIP DUAL INVERTING
|
Tube | 8-DIP (0.300"，7.62mm) | Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 7.5ns，6.5ns | 2A，2A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 9A，9A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 22ns，15ns | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DVR 4A DUAL HS 8DIP
|
Tube | 8-DIP (0.300"，7.62mm) | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel，P-Channel MOSFET | 9ns，8ns | 4A，4A | ||
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|
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IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP INVERTING
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Tube | 8-DIP (0.300"，7.62mm) | Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 14A，14A | ||
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|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
14A 8 PIN DIP NON INVERTING
|
Tube | 8-DIP (0.300"，7.62mm) | Non-Inverting | Single | 1 | IGBT，N-Channel，P-Channel MOSFET | 25ns，18ns | 14A，14A | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
3A DUAL NON-INVERTING LOW SIDE G
|
- | 8-DIP (0.300"，7.62mm) | CMOS/TTL | Independent | 2 | IGBT | 18ns，18ns | 3A，3A |
