- Packaging：
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- Voltage - Supply：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 33
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
1,784
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | 12 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Renesas Electronics America Inc. |
918
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16SOIC
|
Tube | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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Renesas Electronics America Inc. |
838
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DRIVER H-BRIDGE 1A 16SOIC
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Tube | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
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Texas Instruments |
235
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | 4.7 V ~ 18 V | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16SOIC
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Tape & Reel (TR) | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC DRIVER FET H-BRDG 80V 16-SOIC
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Tape & Reel (TR) | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 80 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | 4.7 V ~ 18 V | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 90 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 16-SOIC
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Tube | 12 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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|
IXYS |
Enquête
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- |
-
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MOQ: 47 MPQ: 1
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IC MOSFET DRVR LS 4A DUAL 16SOIC
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Tube | 4.5 V ~ 35 V | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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|
|
IXYS |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | 4.5 V ~ 35 V | 16-SOIC (0.295"，7.50mm Width) | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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|
|
IXYS |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | 4.5 V ~ 35 V | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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|
|
IXYS |
Enquête
|
- |
-
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MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
Tube | 4.5 V ~ 35 V | 16-SOIC (0.295"，7.50mm Width) | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
|
IC DRIVER H-BRIDGE 16-SOIC
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Tube | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-SOIC
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Tape & Reel (TR) | 8.5 V ~ 15 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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|
|
IXYS |
Enquête
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- |
-
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MOQ: 46 MPQ: 1
|
IC MOSFET DRVR DUAL 4A 16-SOIC
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Tube | 4.5 V ~ 35 V | 16-SOIC (0.295"，7.50mm Width) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
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Cut Tape (CT) | 10 V ~ 20 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH SIDE DUAL 16-SOIC
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- | 10 V ~ 20 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | High-Side | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.6V，3.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
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Tape & Reel (TR) | 10 V ~ 20 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | 16-SOIC (0.154"，3.90mm Width) | Non-Inverting | Independent | Half-Bridge，Low-Side | 3 | N-Channel MOSFET | 600V | 25ns，25ns | 0.6V，3.5V | 500mA，500mA |
