- Packaging：
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- Series：
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- Voltage - Supply：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 29
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Supplier Device Package | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | 5A，5A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | SOT-26 | Low-Side | IGBT，SiC MOSFET | - | 48ns，35ns | 10A，10A | ||
|
|
|
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | 8A，8A | ||
|
|
|
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | N-Channel MOSFET | - | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | N-Channel MOSFET | - | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | Automotive，AEC-Q101 | 40V (Max) | SOT-26 | Low-Side | N-Channel MOSFET | - | 210ns，240ns | 2A，2A | ||
|
|
|
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | SOT-23-6 | Low-Side | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | 9A，9A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Tape & Reel (TR) | μHVIC | 10 V ~ 18 V | SOT-23-6 | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
Cut Tape (CT) | μHVIC | 10 V ~ 18 V | SOT-23-6 | High-Side | N-Channel MOSFET | 600V | 85ns，40ns | 160mA，240mA |
