- Voltage - Supply:
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- Channel Type:
-
- Driven Configuration:
-
- Rise / Fall Time (Typ):
-
- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
-
Découvrez les produits 9
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
12 V ~ 20 V | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
Texas Instruments |
235
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR 16-SOIC
|
4.7 V ~ 18 V | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 80 MPQ: 1
|
IC HIGH CURRENT FET DRVR 16-SOIC
|
4.7 V ~ 18 V | Inverting,Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 90 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
|
12 V ~ 20 V | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 1200V | 25ns,17ns | 6V,9.5V | 2A,2.5A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
4.5 V ~ 35 V | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
4.5 V ~ 35 V | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
4.5 V ~ 35 V | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 47 MPQ: 1
|
IC MOSFET DRVR LS 4A DUAL 16SOIC
|
4.5 V ~ 35 V | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 46 MPQ: 1
|
IC MOSFET DRVR DUAL 4A 16-SOIC
|
4.5 V ~ 35 V | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 16ns,13ns | 0.8V,2.5V | 4A,4A |