Découvrez les produits 26
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
HIP4082IBZ
Renesas Electronics America Inc.
918
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER FET H-BRIDGE 16SOIC
Tube 8.5 V ~ 15 V 16-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
ISL83202IBZ
Renesas Electronics America Inc.
838
3 jours
-
MOQ: 1  MPQ: 1
IC FET DRIVER H-BRIDGE 1A 16SOIC
Tube 8.5 V ~ 15 V 16-SOIC Inverting,Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 70V 9ns,9ns 1V,2.5V 1A,1A
ISL83202IBZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC FET DRIVER H-BRIDGE 1A 16SOIC
Tape & Reel (TR) 8.5 V ~ 15 V 16-SOIC Inverting,Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 70V 9ns,9ns 1V,2.5V 1A,1A
HIP4082IBZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 5000  MPQ: 1
IC DRIVER FET H-BRDG 80V 16-SOIC
Tape & Reel (TR) 8.5 V ~ 15 V 16-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
HIP4082IBZTR5676
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER FET H-BRDG 80V 16SOIC
Tape & Reel (TR) 8.5 V ~ 15 V 16-SO Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
HIP4082IB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 480  MPQ: 1
IC DRIVER H-BRIDGE 16-SOIC
Tube 8.5 V ~ 15 V 16-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
HIP4082IBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER H-BRIDGE 16-SOIC
Tape & Reel (TR) 8.5 V ~ 15 V 16-SOIC Non-Inverting Independent Half-Bridge 4 N-Channel MOSFET 95V 9ns,9ns 1V,2.5V 1.4A,1.3A
L9610C013TR
STMicroelectronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC CTRLR PWM POWER MOS SO-16
Tape & Reel (TR) 6 V ~ 16 V 16-SO Non-Inverting Single High-Side 1 N-Channel,P-Channel MOSFET - - 0.8V,2V -
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Tape & Reel (TR) 10 V ~ 20 V 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
Cut Tape (CT) 10 V ~ 20 V 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21853STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH SIDE DUAL 16-SOIC
- 10 V ~ 20 V 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Tape & Reel (TR) 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
Cut Tape (CT) 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21953STRPBF
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HI/LO SIDE DUAL 16SOIC
- 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21853SPBF
Infineon Technologies
Enquête
-
-
MOQ: 225  MPQ: 1
IC DVR DUAL HIGH SIDE 16-SOIC
Tube 10 V ~ 20 V 16-SOIC Non-Inverting Independent High-Side 2 IGBT,N-Channel MOSFET 600V 15ns,15ns 0.6V,3.5V 2A,2A
IRS21953SPBF
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA
IRS21952SPBF
Infineon Technologies
Enquête
-
-
MOQ: 135  MPQ: 1
IC DVR HISIDE DUAL LOSIDE 16SOIC
Tube 10 V ~ 20 V 16-SOIC Non-Inverting Independent Half-Bridge,Low-Side 3 N-Channel MOSFET 600V 25ns,25ns 0.6V,3.5V 500mA,500mA