- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 432
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Diodes Incorporated |
21,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | Automotive,AEC-Q101 | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | Automotive,AEC-Q101 | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
23,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | Automotive,AEC-Q101 | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 8.9ns,8.9ns | - | 5A,5A | ||||
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Tape & Reel (TR) | - | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
Cut Tape (CT) | - | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
7,375
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT26
|
- | - | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Single | Low-Side | 1 | IGBT,SiC MOSFET | - | 48ns,35ns | - | 10A,10A | ||||
Diodes Incorporated |
33,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 40V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 13.4ns,12.4ns | - | 8A,8A | ||||
IXYS Integrated Circuits Division |
42,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
42,369
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR NONINV 1.5A 8-DFN
|
- | - | 4.5 V ~ 30 V | 8-VDFN Exposed Pad | 8-DFN (3x3) | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
8,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 30 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | - | 4.5 V ~ 30 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,8ns | 0.8V,2.4V | 1.5A,1.5A | ||||
ON Semiconductor |
42,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Tape & Reel (TR) | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
Cut Tape (CT) | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A |