Découvrez les produits 17
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Driven Configuration Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
ZXGD3003E6TA
Diodes Incorporated
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3003E6TA
Diodes Incorporated
11,323
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3004E6TA
Diodes Incorporated
33,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3004E6TA
Diodes Incorporated
34,034
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 13.4ns,12.4ns 8A,8A
ZXGD3002E6TA
Diodes Incorporated
6,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 20V (Max) Low-Side IGBT,N-Channel MOSFET - 8.3ns,10.8ns 9A,9A
ZXGD3002E6TA
Diodes Incorporated
6,706
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 20V (Max) Low-Side IGBT,N-Channel MOSFET - 8.3ns,10.8ns 9A,9A
ZXGD3002E6TA
Diodes Incorporated
6,706
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 20V (Max) Low-Side IGBT,N-Channel MOSFET - 8.3ns,10.8ns 9A,9A
IRS25752LTRPBF
Infineon Technologies
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DRIVER 1CH 600V SOT23
Tape & Reel (TR) μHVIC 10 V ~ 18 V High-Side N-Channel MOSFET 600V 85ns,40ns 160mA,240mA
IRS25752LTRPBF
Infineon Technologies
3,470
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 600V SOT23
Cut Tape (CT) μHVIC 10 V ~ 18 V High-Side N-Channel MOSFET 600V 85ns,40ns 160mA,240mA
IRS25752LTRPBF
Infineon Technologies
3,470
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRIVER 1CH 600V SOT23
- μHVIC 10 V ~ 18 V High-Side N-Channel MOSFET 600V 85ns,40ns 160mA,240mA
ZXGD3001E6TA
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Tape & Reel (TR) - 12V (Max) Low-Side IGBT,N-Channel MOSFET - 7.3ns,11ns 9A,9A
ZXGD3001E6TA
Diodes Incorporated
1,932
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
Cut Tape (CT) - 12V (Max) Low-Side IGBT,N-Channel MOSFET - 7.3ns,11ns 9A,9A
ZXGD3001E6TA
Diodes Incorporated
1,932
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT23-6
- - 12V (Max) Low-Side IGBT,N-Channel MOSFET - 7.3ns,11ns 9A,9A
ZXGD3003E6QTA
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 40V (Max) Low-Side IGBT,N-Channel MOSFET - 8.9ns,8.9ns 5A,5A
ZXGD3001E6QTA
Diodes Incorporated
Enquête
-
-
MOQ: 3000  MPQ: 1
IC GATE DRVR IGBT/MOSFET SOT26
Tape & Reel (TR) - 12V (Max) Low-Side N-Channel MOSFET - 7.3ns,11ns 9A,9A