- Series:
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- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 133
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | ||
IXYS Integrated Circuits Division |
4,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Tape & Reel (TR) | - | 4.5 V ~ 35 V | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
Cut Tape (CT) | - | 4.5 V ~ 35 V | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
4,158
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8DFN
|
- | - | 4.5 V ~ 35 V | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
23,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
Diodes Incorporated |
6,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | - | 20V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | IGBT,N-Channel MOSFET | 8.3ns,10.8ns | - | ||||
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | - | 20V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | IGBT,N-Channel MOSFET | 8.3ns,10.8ns | - | ||||
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | - | 20V (Max) | SOT-23-6 | SOT-23-6 | Surface Mount | Non-Inverting | IGBT,N-Channel MOSFET | 8.3ns,10.8ns | - | ||||
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8MSOP
|
Tape & Reel (TR) | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
4,006
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8MSOP
|
Cut Tape (CT) | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
4,006
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SGL HS 9A 8MSOP
|
- | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-DIP
|
Tube | - | 4.5 V ~ 35 V | 8-DIP (0.300",7.62mm) | 8-DIP | Through Hole | Non-Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
Texas Instruments |
9,183
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
4,175
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-SOIC
|
Tube | - | 4 V ~ 15 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
3,959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
3,074
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-DIP
|
Tube | - | 4 V ~ 15 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
IXYS Integrated Circuits Division |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO263-5
|
Tube | - | 4.5 V ~ 35 V | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263-5 | Surface Mount | Inverting | IGBT,N-Channel,P-Channel MOSFET | 22ns,15ns | 0.8V,3V | ||||
Texas Instruments |
6,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1.1V,2.7V | ||||
Texas Instruments |
959
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SGL HS 9A 8-MSOP
|
Tube | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting | N-Channel,P-Channel MOSFET | 20ns,20ns | 1V,2V |