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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 771
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
2,690
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL HS 4A 8-MSOP
|
Tube | - | 4.5 V ~ 15 V | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
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ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | Automotive，AEC-Q100 | 10 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
|
IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
|
|
|
IXYS Integrated Circuits Division |
4,679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
3,463
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
2,088
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL IN/NON 8SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
|
|
|
IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N-CH 14A LO SIDE TO-220-5
|
Tube | - | 4.5 V ~ 35 V | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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|
|
Infineon Technologies |
1,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | - | 12 V ~ 20 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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|
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Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | - | 12 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
|
|
|
IXYS Integrated Circuits Division |
4,652
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO263
|
Tube | - | 12.5 V ~ 35 V | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE 5TO220
|
Tube | - | 12.5 V ~ 35 V | TO-220-5 | TO-220-5 | Through Hole | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
|
|
|
IXYS Integrated Circuits Division |
1,249
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER LOW SIDE TO-263-5
|
Tube | - | 9 V ~ 35 V | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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|
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Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | - | 4.7 V ~ 18 V | TO-220-5 | TO-220-5 | Through Hole | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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|
|
Linear Technology/Analog Devices |
500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HIGH-SIDE 10MSOP
|
Tube | - | 60V (Max) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) Exposed Pad | 10-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 90ns，40ns | - | - | ||
|
|
|
Diodes Incorporated |
12,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Tape & Reel (TR) | - | 40V (Max) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
Cut Tape (CT) | - | 40V (Max) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
14,341
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT363
|
- | - | 40V (Max) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
27,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | Automotive，AEC-Q101 | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A | ||
|
|
|
Diodes Incorporated |
28,160
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | Automotive，AEC-Q101 | 40V (Max) | SOT-23-6 | SOT-26 | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 210ns，240ns | - | 2A，2A |
