- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 771
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
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Tube | - | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 3.7V,7.93V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
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Tape & Reel (TR) | - | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tube | - | 8 V ~ 14 V | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 10TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 750 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tube | - | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC HALF BRIDGE FET DRIVER 9TDFN
|
Tape & Reel (TR) | - | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.4V,2.2V | 2A,2A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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Tape & Reel (TR) | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 9500 MPQ: 1
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IC GATE DVR HIGH SIDE 8-SOIC
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Tube | - | 10 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
Enquête
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- |
-
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MOQ: 285 MPQ: 1
|
IC DRVR IGBT/MOSFET 8SOIC
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Tube | Automotive,AEC-Q100 | 4.4 V ~ 6.5 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 150V | 200ns,200ns | - | 500mA,500mA | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
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Tube | Automotive,AEC-Q100 | 8 V ~ 14 V | 10-WDFN Exposed Pad | 10-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
|
Tube | Automotive,AEC-Q100 | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | 2A,2A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR SGL 9A HS 8SOIC
|
Cut Tape (CT) | Automotive,AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8SOIC
|
- | Automotive,AEC-Q100 | 4.5 V ~ 18 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns,19ns | - | 10.6A,11.4A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
|
Tape & Reel (TR) | Automotive,AEC-Q100 | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 9DFN
|
Cut Tape (CT) | Automotive,AEC-Q100 | 8 V ~ 14 V | 9-WDFN Exposed Pad | 9-TDFN (4x4) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | 2A,2A | ||||
IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 4000 MPQ: 1
|
5-AMP DUAL LOW-SIDE MOSFET DRIVE
|
Tape & Reel (TR) | - | 5 V ~ 20 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7ns,7ns | 0.8V,2.5V | 5A,5A | ||||
Linear Technology/Analog Devices |
695
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH 8-MSOP
|
Tube | - | 7.2 V ~ 13.5 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 8ns,5ns | 1.85V,3.25V | 2.5A,3A | ||||
Linear Technology/Analog Devices |
723
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR N-CH SYNC 8-MSOP
|
Tube | - | 4.5 V ~ 13.5 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 8ns,5ns | 1.85V,3.25V | 2.5A,3A | ||||
Linear Technology/Analog Devices |
237
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR N-CH MOSFET 10MSOP
|
Tube | - | 3.5 V ~ 15 V | 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad | 10-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns,40ns | - | - | ||||
Linear Technology/Analog Devices |
119
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV 8-MSOP
|
Tube | - | 4 V ~ 15 V | 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad | 8-MSOP-EP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.2V,1.6V | 1.1A,1.1A |