Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 771
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
HIP2122FRTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 3.7V,7.93V 2A,2A
HIP2122FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tube - 8 V ~ 14 V 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTAZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 10TDFN
Tape & Reel (TR) - 8 V ~ 14 V 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tube - 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V 2A,2A
HIP2123FRTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC HALF BRIDGE FET DRIVER 9TDFN
Tape & Reel (TR) - 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.4V,2.2V 2A,2A
FAN7171MX
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Tape & Reel (TR) - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
FAN7171M
ON Semiconductor
Enquête
-
-
MOQ: 9500  MPQ: 1
IC GATE DVR HIGH SIDE 8-SOIC
Tube - 10 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 25ns,15ns 0.8V,2.5V 4A,4A
AUIRS20161S
Infineon Technologies
Enquête
-
-
MOQ: 285  MPQ: 1
IC DRVR IGBT/MOSFET 8SOIC
Tube Automotive,AEC-Q100 4.4 V ~ 6.5 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Single High-Side 1 IGBT,N-Channel MOSFET 150V 200ns,200ns - 500mA,500mA
ISL78420ARTAZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 10DFN
Tube Automotive,AEC-Q100 8 V ~ 14 V 10-WDFN Exposed Pad 10-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V 2A,2A
ISL78420ARTBZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 9DFN
Tube Automotive,AEC-Q100 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V 2A,2A
FAN3122CMX-F085
ON Semiconductor
Enquête
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-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A HS 8SOIC
Cut Tape (CT) Automotive,AEC-Q100 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
FAN3122CMX-F085
ON Semiconductor
Enquête
-
-
MOQ: 1  MPQ: 1
IC GATE DVR SGL 9A HS 8SOIC
- Automotive,AEC-Q100 4.5 V ~ 18 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single Low-Side 1 N-Channel MOSFET - 23ns,19ns - 10.6A,11.4A
ISL78420ARTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 9DFN
Tape & Reel (TR) Automotive,AEC-Q100 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V 2A,2A
ISL78420ARTBZ-T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRVR HALF BRIDGE 9DFN
Cut Tape (CT) Automotive,AEC-Q100 8 V ~ 14 V 9-WDFN Exposed Pad 9-TDFN (4x4) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 1.8V,4V 2A,2A
IX4340NETR
IXYS Integrated Circuits Division
Enquête
-
-
MOQ: 4000  MPQ: 1
5-AMP DUAL LOW-SIDE MOSFET DRIVE
Tape & Reel (TR) - 5 V ~ 20 V 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 7ns,7ns 0.8V,2.5V 5A,5A
LTC4444MPMS8E#PBF
Linear Technology/Analog Devices
695
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER N-CH 8-MSOP
Tube - 7.2 V ~ 13.5 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 8ns,5ns 1.85V,3.25V 2.5A,3A
LTC4444MPMS8E-5#PBF
Linear Technology/Analog Devices
723
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR N-CH SYNC 8-MSOP
Tube - 4.5 V ~ 13.5 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 8ns,5ns 1.85V,3.25V 2.5A,3A
LTC7001MPMSE#PBF
Linear Technology/Analog Devices
237
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR N-CH MOSFET 10MSOP
Tube - 3.5 V ~ 15 V 10-TFSOP,10-MSOP (0.118",3.00mm Width) Exposed Pad 10-MSOP-EP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET - 90ns,40ns - -
LTC4440AMPMS8E-5#PBF
Linear Technology/Analog Devices
119
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH-SIDE DVR HS HV 8-MSOP
Tube - 4 V ~ 15 V 8-TSSOP,8-MSOP (0.118",3.00mm Width) Exposed Pad 8-MSOP-EP Surface Mount Non-Inverting Single High-Side 1 N-Channel MOSFET 80V 10ns,7ns 1.2V,1.6V 1.1A,1.1A