Number of Drivers:
High Side Voltage - Max (Bootstrap):
Découvrez les produits 771
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDI402SI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSFET DRIVER LS 2A 8SOIC
Tube - 4.5 V ~ 35 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 8ns,8ns 0.8V,3V 2A,2A
IXDD409YI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC HIGH CURR GATE DRVR 9A TO-263
Tube - 4.5 V ~ 35 V TO-263-6,D2Pak (5 Leads + Tab),TO-263BA TO-263 (D2Pak) Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 10ns,10ns 0.8V,3.5V 9A,9A
HIP2100EIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRIVER HALF BRIDGE 8-SOIC
Tube - 9 V ~ 14 V 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100EIBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER HALF BRIDGE 100V 8SOIC
Tape & Reel (TR) - 9 V ~ 14 V 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100IR4
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tube - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100IR4T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tape & Reel (TR) - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100IR4Z
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tube - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100IR4ZT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRIVER HALF BRIDGE 100V 12DFN
Tape & Reel (TR) - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2100IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRDG 100V/2A 16-QFN
Tape & Reel (TR) - 9 V ~ 14 V 16-VQFN Exposed Pad 16-QFN-EP (5x5) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 4V,7V 2A,2A
HIP2101EIB
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 980  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tube - 9 V ~ 14 V 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101EIBT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRVR HALF BRDG 100V 8EP-SOIC
Tape & Reel (TR) - 9 V ~ 14 V 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IR4
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 750  MPQ: 1
IC DRVR HALF BRIDGE 100V 12-DFN
Tube - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IR4T
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 12-DFN
Tape & Reel (TR) - 9 V ~ 14 V 12-VFDFN Exposed Pad 12-DFN (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
HIP2101IRT
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 6000  MPQ: 1
IC DRVR HALF BRIDGE 100V 16-QFN
Tape & Reel (TR) - 9 V ~ 14 V 16-VQFN Exposed Pad 16-QFN-EP (5x5) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 114V 10ns,10ns 0.8V,2.2V 2A,2A
IXDF402SI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
DUAL 2AMP ULTRAFAST MOSFET 8SOIC
Tube - 4.5 V ~ 35 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 8ns,8ns 0.8V,3V 2A,2A
IXDN414SI
IXYS
Enquête
-
-
MOQ: 94  MPQ: 1
IC DRIVER MOSF/IGBT 14A14SOIC
Tube - 4.5 V ~ 35 V 14-SOIC (0.154",3.90mm Width) 14-SOIC Surface Mount Non-Inverting Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 22ns,20ns 0.8V,3.5V 14A,14A
IXDF502PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSF DRIVER FAST DUAL 8-DIP
Tube - 4.5 V ~ 30 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDI502PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSF DRVR FAST DUAL INV 8-DIP
Tube - 4.5 V ~ 30 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDN502PI
IXYS
Enquête
-
-
MOQ: 50  MPQ: 1
IC MOSF DRIVER FAST DUAL 8-DIP
Tube - 4.5 V ~ 30 V 8-DIP (0.300",7.62mm) 8-PDIP Through Hole Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A
IXDF502SIAT/R
IXYS
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSF DRIVER FAST DUAL 8-SOIC
Tape & Reel (TR) - 4.5 V ~ 30 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting,Non-Inverting Independent Low-Side 2 IGBT,N-Channel,P-Channel MOSFET - 7.5ns,6.5ns 0.8V,3V 2A,2A