- Voltage - Supply:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 771
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 2A 8SOIC
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Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 8ns,8ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
|
IC HIGH CURR GATE DRVR 9A TO-263
|
Tube | - | 4.5 V ~ 35 V | TO-263-6,D2Pak (5 Leads + Tab),TO-263BA | TO-263 (D2Pak) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,3.5V | 9A,9A | ||||
Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 980 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-SOIC
|
Tube | - | 9 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 8SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 750 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
|
Tube | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
|
Tube | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 6000 MPQ: 1
|
IC DRIVER HALF BRIDGE 100V 12DFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRDG 100V/2A 16-QFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 4V,7V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 980 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
|
Tube | - | 9 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC DRVR HALF BRDG 100V 8EP-SOIC
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 750 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
|
Tube | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 12-DFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 12-VFDFN Exposed Pad | 12-DFN (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 6000 MPQ: 1
|
IC DRVR HALF BRIDGE 100V 16-QFN
|
Tape & Reel (TR) | - | 9 V ~ 14 V | 16-VQFN Exposed Pad | 16-QFN-EP (5x5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 0.8V,2.2V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
DUAL 2AMP ULTRAFAST MOSFET 8SOIC
|
Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 8ns,8ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 94 MPQ: 1
|
IC DRIVER MOSF/IGBT 14A14SOIC
|
Tube | - | 4.5 V ~ 35 V | 14-SOIC (0.154",3.90mm Width) | 14-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,20ns | 0.8V,3.5V | 14A,14A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-DIP
|
Tube | - | 4.5 V ~ 30 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSF DRVR FAST DUAL INV 8-DIP
|
Tube | - | 4.5 V ~ 30 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
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MOQ: 50 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-DIP
|
Tube | - | 4.5 V ~ 30 V | 8-DIP (0.300",7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A | ||||
IXYS |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSF DRIVER FAST DUAL 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 30 V | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 7.5ns,6.5ns | 0.8V,3V | 2A,2A |