- Voltage - Supply：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 771
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
709
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8EPSOIC
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Tube | - | 9 V ~ 14 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC HALF BRIDGE DRIVER 8SOIC
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Tape & Reel (TR) | - | 9 V ~ 14 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
180
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF BRIDGE DRIVER 8SOIC
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Cut Tape (CT) | - | 9 V ~ 14 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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Renesas Electronics America Inc. |
180
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HALF BRIDGE DRIVER 8SOIC
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- | - | 9 V ~ 14 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 4V，7V | 2A，2A | ||
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IXYS Integrated Circuits Division |
1,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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14A 5 LEAD TO-263 INVERTING
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Tube | - | 4.5 V ~ 35 V | TO-263-6，D2Pak (5 Leads + Tab)，TO-263BA | TO-263-5 | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Texas Instruments |
235
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR 16-SOIC
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Tube | - | 4.7 V ~ 18 V | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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IXYS Integrated Circuits Division |
376
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 1.5A 8SOIC
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Tube | - | 4.5 V ~ 30 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
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IXYS Integrated Circuits Division |
831
|
3 jours |
-
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MOQ: 1 MPQ: 1
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5-AMP DUAL LOW-SIDE MOSFET DRIVE
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Tube | - | 5 V ~ 20 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7ns，7ns | 0.8V，2.5V | 5A，5A | ||
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IXYS Integrated Circuits Division |
991
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
149
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-DI
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Tube | - | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS Integrated Circuits Division |
633
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A INV 8-DIP
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Tube | - | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
581
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL ENABLE 8DIP
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Tube | - | 4.5 V ~ 35 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS Integrated Circuits Division |
715
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 2A DUAL LO SIDE 8-SO
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Tube | - | 4.5 V ~ 35 V | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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Texas Instruments |
680
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL HS 4A 8-DIP
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Tube | - | 4.5 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
641
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HS PWR FET DRVR 8-MSOP
|
Tube | - | 4.5 V ~ 15 V | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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IXYS Integrated Circuits Division |
262
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A SOIC
|
Tube | - | 4.5 V ~ 30 V | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，3V | 3A，3A | ||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
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Tape & Reel (TR) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
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|
|
ON Semiconductor |
840
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR SGL CMOS 2A 6MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
|
|
|
ON Semiconductor |
840
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL CMOS 2A 6MLP
|
- | - | 4.5 V ~ 18 V | 6-VDFN Exposed Pad | 6-MLP (2x2) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | - | 3A，3A | ||
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|
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Texas Instruments |
273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
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Tube | - | 4.5 V ~ 15 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Through Hole | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A |
