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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,188
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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-
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MOQ: 1 MPQ: 1
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IC DRVR MOSF SYNC BUCK 12V 8SOIC
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- | 8 V ~ 14 V | 0°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 26V | 15ns，15ns | 0.8V，2V | 2A，2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8SOIC
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- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL BOOTST 10MSOP
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- | 4.75 V ~ 5.25 V | 0°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 20ns，25ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL BOOTST 10MSOP
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- | 4.6 V ~ 6 V | 0°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 14ns，11ns | 0.8V，2V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 9A LOSIDE 8SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 20ns，24ns | 0.8V，2.4V | 9A，9A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL BOOTST 10MSOP
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- | 4.6 V ~ 6 V | 0°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 14ns，11ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER DUAL 2A 8-MLP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER DUAL 2A 8-SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8MLP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LOW DUAL 2A HS 8SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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IXYS |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER 9A 6-DFN
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- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER SGL 9A 6-DFN
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- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (4x5) | Surface Mount | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 12V 8-SOIC
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- | 4.6 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 18ns，10ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET GATE DVR DUAL 8-SOIC
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 16ns，15ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET GATE DVR DUAL 8-DFN
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 30V | 16ns，15ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER VR11.1/AMD 8-SOIC
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- | 10 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 16ns，11ns | 1V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 10-MSOP
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- | 4.6 V ~ 5.5 V | -10°C ~ 150°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-MSOP | Surface Mount | Inverting，Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，15ns | 0.8V，2V | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL 12V 8LFCSP
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- | 4.15 V ~ 13.2 V | 0°C ~ 150°C (TJ) | 8-VFDFN Exposed Pad，CSP | 8-LFCSP (3x3) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 20ns，20ns | 0.8V，2V | - | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 3A L-SIDE 8SOIC
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Automotive，AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，2.4V | 3A，3A |
