- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 36
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Diodes Incorporated |
11,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.9ns，8.9ns | - | 5A，5A | ||
|
|
|
Diodes Incorporated |
34,034
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 40V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 13.4ns，12.4ns | - | 8A，8A | ||
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|
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Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Automotive，AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
6,964
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET GATE DVR 7.6A SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
|
|
|
Texas Instruments |
11,022
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
7,423
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Diodes Incorporated |
6,706
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 20V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8.3ns，10.8ns | - | 9A，9A | ||
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|
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Infineon Technologies |
4,783
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
|
|
|
Infineon Technologies |
3,470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 600V | 85ns，40ns | - | 160mA，240mA | ||
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|
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Maxim Integrated |
4,884
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HS SOT23
|
- | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 28ns，13ns | 0.8V，2V | 3A，7A | ||
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|
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Texas Instruments |
3,833
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 7.6A LO SIDE SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 3ns，2ns | 0.8V，2.4V | 4.5A，7.6A | ||
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|
|
Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Automotive，AEC-Q100 | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
5,850
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 7.6A SOT23-
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | 0.8V，2.4V | 1.3A，7.6A | ||
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|
|
Diodes Incorporated |
1,531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SYNCH MOSFET CONTROLLER,SOT23
|
- | 3.5 V ~ 40 V | -40°C ~ 150°C (TJ) | SOT-23-6 | - | Synchronous | Low-Side | 1 | N-Channel MOSFET | - | 360ns，210ns | - | 1.5A，3A | ||
|
|
|
Diodes Incorporated |
1,932
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 12V (Max) | -55°C ~ 150°C (TJ) | SOT-23-6 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 7.3ns，11ns | - | 9A，9A | ||
|
|
|
Texas Instruments |
2,581
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
1,669
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
SINGLE DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
2,952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 7.6A LSIDE SOT23-6
|
- | 4 V ~ 12.6 V | -40°C ~ 125°C (TJ) | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 82ns，12.5ns | - | 1.3A，7.6A |
