- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 363
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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|
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Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
IXYS Integrated Circuits Division |
9,070
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 1.5A 8SOIC
|
- | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，8ns | 0.8V，2.4V | 1.5A，1.5A | ||
|
|
|
Infineon Technologies |
7,943
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
25,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW GATE 8-SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 60ns，30ns | 0.8V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
21,270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8-SOP
|
- | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
|
|
|
ON Semiconductor |
43,853
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
12,102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P-N 2A 30V 8-SOIC
|
- | 8 V ~ 27 V | -55°C ~ 150°C (TJ) | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | - | 21ns，8ns | 0.8V，2.25V | 1A，1.5A | ||
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Texas Instruments |
36,233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 100V 1A 8SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
11,870
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE 90V 1A 8-SOIC
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
ON Semiconductor |
8,128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE GATE DRIVER 8-SOP
|
- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.5V | 350mA，650mA | ||
|
|
|
Texas Instruments |
28,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOSFET DRVR 5A DUAL LOSIDE 8SOIC
|
- | 3.5 V ~ 14 V | -40°C ~ 125°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 14ns，12ns | 0.8V，2.2V | 3A，5A | ||
|
|
|
Infineon Technologies |
12,190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
|
|
|
Infineon Technologies |
11,887
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
9,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR LOW SIDE DUAL 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 25ns，25ns | 0.8V，2.5V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
10,784
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
