- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 94
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
18,812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
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ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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Texas Instruments |
7,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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|
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Texas Instruments |
21,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
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Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
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Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | - | - | - | ||
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|
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ON Semiconductor |
6,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGNITION MODULE DRIVER 8SOIC
|
4 V ~ 28 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | IGBT | - | - | 1.2V，2V | - | ||
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|
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Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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|
|
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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Maxim Integrated |
2,143
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 1CH 16NS 10TDFN
|
4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 22ns，16ns | 0.8V，2V | 4A，8A | ||
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|
|
Texas Instruments |
4,779
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,052
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER SOT-23-5
|
4 V ~ 14 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | 34V | 14ns，14ns | - | 2A，2A | ||
|
|
|
Texas Instruments |
1,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A | ||
|
|
|
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A |
