- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 38
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
9,815
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 14DSO
|
10 V ~ 17.5 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-DSO | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，37ns | 1.1V，1.7V | 1.8A，2.3A | ||
|
|
|
Infineon Technologies |
4,972
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14DSO
|
10 V ~ 25 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，37ns | 1.1V，1.7V | 2.3A，2.3A | ||
|
|
|
Infineon Technologies |
7,077
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HALF BRIDGE 8DSO
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-DSO | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
4,769
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8SOIC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns，24ns | 1.1V，1.7V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
4,909
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
|
|
|
Infineon Technologies |
7,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR BRDG 60V .25A DSO14
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | PG-DSO-14 | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel，P-Channel MOSFET | 600V | 48ns，24ns | 1.1V，1.7V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
1,600
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR DSO28
|
13 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | PG-DSO-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 600V | 60ns，26ns | 1.1V，1.7V | - | ||
|
|
|
Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A | ||
|
|
|
Infineon Technologies |
6,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | PG-WSON-8-1 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
2,948
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6WSOP
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 6-WDFN Exposed Pad | PG-WSON-6-1 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 6.5ns，4.5ns | - | 4A，8A | ||
|
|
|
Infineon Technologies |
2,696
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
8 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A | ||
|
|
|
Infineon Technologies |
2,449
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6-2 | Inverting，Non-Inverting | Single | Half-Bridge，Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 6.5ns，4.5ns | 1.2V，1.9V | 4A，8A | ||
|
|
|
Infineon Technologies |
4,897
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | PG-TSSOP-8 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | 1.2V，1.9V | 5A，5A | ||
|
|
|
Infineon Technologies |
3,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8TSSOP
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | PG-TSSOP-8 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 6.4ns，5.4ns | 0.8V，2.3V | 4A，4A | ||
|
|
|
Infineon Technologies |
2,150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DSO8
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8-60 | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 6.4ns，5.4ns | 0.8V，2.3V | 4A，4A | ||
|
|
|
Infineon Technologies |
1,803
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8DSO
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
1,240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 8TSSOP
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | PG-TSSOP-8 | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 5.3ns，4.5ns | - | 5A，5A | ||
|
|
|
Infineon Technologies |
2,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A |
