- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 15
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
241,985
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Texas Instruments |
50,753
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
25,202
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
8,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR SYNC DUAL 8SON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 105°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | - | 0.7V，4V | - | ||
|
|
|
ON Semiconductor |
2,416
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC LOW SIDE IGBT DRIVER 8SOIC
|
- | 25V (Max) | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 0.8V，2V | 1.5A，2A | ||
|
|
|
Texas Instruments |
3,368
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
1,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
3,182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
ON Semiconductor |
2,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 250mA，500mA | ||
|
|
|
Texas Instruments |
648
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-5
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | - | 1.2V，2.2V | 2.5A，2.5A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET IGBT 8SO
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER DUAL LOW SIDE 8SOIC
|
- | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 0.8V，2.7V | 2.3A，3.3A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | - | 250mA，500mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HALF BRIDGE 10WSON
|
- | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 118V | 0.8V，2.2V | 1.2A，1.8A |
