- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 88
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
9,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER HIGH SIDE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 1V，3.6V | 250mA，500mA | ||
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ON Semiconductor |
43,853
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOP
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- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
17,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HISIDE 2CH 14-SOP
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-SOIC (0.154"，3.90mm Width) | 14-SOP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.3V，2.5V | 350mA，650mA | ||
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STMicroelectronics |
26,196
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC IGBT/MOSFET DRIVER ADV 8-SOIC
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- | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Infineon Technologies |
10,784
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8-SOIC
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- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
4,296
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR CURRENT SENSE 1CH 8-SOIC
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- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
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Texas Instruments |
11,073
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH SIDE PROTECTION CONTROL
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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ON Semiconductor |
4,990
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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Infineon Technologies |
20,745
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
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- | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
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Texas Instruments |
7,982
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
ICMOSFET DVR W/LOSS PROT 8-SOIC
|
- | 7 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 1.5V，3.5V | - | ||
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Microchip Technology |
6,733
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LOW SIDE 8ML
|
- | 2.75 V ~ 30 V | -40°C ~ 125°C (TJ) | 8-VFDFN Exposed Pad，8-MLF? | 8-MLF? (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Texas Instruments |
7,778
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
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Texas Instruments |
21,741
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC CTRL HIGH SIDE AUTO 10MSOP
|
Automotive，AEC-Q100 | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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Infineon Technologies |
2,466
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LIMITING 16SOIC
|
- | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Infineon Technologies |
4,783
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 100V SOT23
|
μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | N-Channel MOSFET | 100V | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
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Infineon Technologies |
3,470
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 600V SOT23
|
μHVIC | 10 V ~ 18 V | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | N-Channel MOSFET | 600V | 85ns，40ns | - | 160mA，240mA | ||
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|
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ON Semiconductor |
5,950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HIGH SIDE 8SOP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 70ns，30ns | 0.8V，2.9V | 250mA，500mA | ||
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|
|
ON Semiconductor |
8,977
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE HIGH SIDE 8SOP
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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ROHM Semiconductor |
19,096
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET CTLR LOAD SW 5-HVSOF
|
- | 2.7 V ~ 5.5 V | -25°C ~ 85°C (TA) | SOT-665 | HVSOF5 | Non-Inverting | Single | 1 | N-Channel MOSFET | - | 130μs，18μs | - | - | ||
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|
|
Infineon Technologies |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DRIVER IC
|
EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | SOT-23-6 | PG-SOT23-6 | Non-Inverting | Single | 1 | N-Channel，P-Channel MOSFET | 84V | 6.5ns，4.5ns | - | 4A，8A |
