- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
7,943
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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ON Semiconductor |
25,500
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW GATE 8-SOP
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 60ns，30ns | 0.8V，2.9V | 350mA，650mA | ||
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ON Semiconductor |
6,038
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER HALF BRIDG 20SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 50ns，30ns | 1V，2.5V | 350mA，650mA | ||
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|
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Infineon Technologies |
14,762
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Infineon Technologies |
5,148
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295"，7.50mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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|
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Infineon Technologies |
7,470
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
5,651
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
8,938
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 14MLPQ
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-VFQFN Exposed Pad | 14-MLPQ (4x4) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，30ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
3,056
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
2,505
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER 1CH 200V SOT23
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μHVIC | 10 V ~ 18 V | -40°C ~ 125°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 85ns，40ns | 0.8V，2.2V | 160mA，240mA | ||
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Infineon Technologies |
2,550
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 25ns，15ns | 0.7V，2.5V | 1A，1A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR 200V 3PHASE 28TSSOP
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EiceDriver | 10 V ~ 17.5 V | -40°C ~ 125°C (TJ) | 28-TSSOP (0.173"，4.40mm Width) | PG-TSSOP-28 | Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel，P-Channel MOSFET | 60ns，26ns | 1.1V，1.7V | - | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 200V 8-SOIC
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- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
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Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 22ns，15ns | 0.7V，2.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8SOIC
|
Automotive，AEC-Q100 | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 22ns，15ns | 0.7V，2.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Automotive，AEC-Q100 | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,488
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LOW SIDE HV
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,882
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO 600V 10DFN
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 85ns，35ns | 0.8V，2.3V | 250mA，500mA | |||
|
|
ON Semiconductor |
2,272
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
HIGH PERFORMANCE DUAL MOS
|
- | 8.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | 8ns，7ns | 0.8V，2.7V | 4A，4A |
