- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 22
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
35,071
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
10,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PERIPH DRVR DUAL HS 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
11,490
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | - | - | 50ns,90ns | 0.8V,2V | ||
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Renesas Electronics America Inc. |
3,781
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
- | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-SOIC (0.295",7.50mm Width) | 24-SOIC | Inverting,Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | ||
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Infineon Technologies |
10,174
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | ||
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Texas Instruments |
4,206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | 8-SO | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
3,996
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8-SOIC
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
2,986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | 8-SO | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
1,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL PERIPHERAL DRVR 8SO
|
- | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | 8-SO | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 5ns,7ns | 0.8V,2V | ||
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Texas Instruments |
5,180
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-SOIC
|
- | 4.75 V ~ 5.25 V,4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V,2V | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 8DSO
|
EiceDriver | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | PG-DSO-8 | Non-Inverting | Independent | Half-Bridge | 2 | IGBT | 600V | 48ns,24ns | 1.1V,1.7V | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER DUAL 8SO
|
- | 4.75 V ~ 5.25 V,4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-SOIC (0.209",5.30mm Width) | 8-SO | Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V,2V | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE DUAL 16SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Non-Inverting | Independent | Half-Bridge,Low-Side | 3 | N-Channel MOSFET | 600V | 25ns,25ns | 0.6V,3.5V | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HI SIDE 600V 500MA 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,80ns | - | ||
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Microchip Technology |
9,678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 500MA SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A,SOT-753 | SOT-23-5 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 19ns,15ns | 0.8V,2.4V | |||
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Microchip Technology |
6,951
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV 500MA SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C | SC-74A,SOT-753 | SOT-23-5 | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 19ns,15ns | 0.8V,2.4V | |||
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Microchip Technology |
2,987
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 40ns,28ns | 0.8V,2V | |||
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Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23 | Inverting | Single | High-Side or Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 40ns,28ns | 0.8V,2V |