- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 219
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
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Texas Instruments |
4,831
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
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Texas Instruments |
58,680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
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Texas Instruments |
18,812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
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Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Automotive，AEC-Q100 | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
ON Semiconductor |
12,541
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A HS 8-SOIC
|
- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | - | 10.6A，11.4A | ||
|
|
|
ON Semiconductor |
8,665
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A TTL 8-SOIC
|
- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | -40°C ~ 140°C (TJ) | 8-WDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
18,225
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 5A 8SOIC
|
- | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
|
Texas Instruments |
18,053
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR LOW SIDE DL 8MSOP
|
- | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
|
|
|
Texas Instruments |
11,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | -40°C ~ 140°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
|
Texas Instruments |
4,578
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-6
|
- | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Automotive，AEC-Q100 | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
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|
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Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
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Renesas Electronics America Inc. |
7,060
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16QSOP
|
- | -40°C ~ 85°C (TA) | 16-SSOP (0.154"，3.90mm Width) | 16-QSOP | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
6,914
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER QUAD 40MHZ HS 16QFN
|
- | -40°C ~ 85°C (TA) | 16-VQFN Exposed Pad | 16-QFN (4x4) | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
4,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER QUAD HS NON-INV 16SOIC
|
- | -40°C ~ 85°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Non-Inverting | Independent | High-Side or Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 13.5ns，13ns | 0.8V，2V | 2A，2A | ||
|
|
|
ON Semiconductor |
76,308
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2A HS LOW SIDE 6MLP
|
- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
3,772
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR SGL TTL 2A 6MLP
|
- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MLP (2x2) | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 13ns，9ns | 0.8V，2V | 3A，3A | ||
|
|
|
ON Semiconductor |
2,589
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-SOIC
|
- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A |
