Fabricant:
Voltage - Supply:
Supplier Device Package:
Channel Type:
Driven Configuration:
Number of Drivers:
High Side Voltage - Max (Bootstrap):
Logic Voltage - VIL, VIH:
Current - Peak Output (Source, Sink):
Découvrez les produits 4
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IXDD609D2TR
IXYS Integrated Circuits Division
4,158
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8DFN
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-DFN-EP (5x4) Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
IXDN609SITR
IXYS Integrated Circuits Division
9,707
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR 9A NON-INV 8SOIC
- 4.5 V ~ 35 V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Single Low-Side 1 IGBT,N-Channel,P-Channel MOSFET - 0.8V,3V 9A,9A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A
AUIRS2012STR
Infineon Technologies
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8SOIC
Automotive,AEC-Q100 10 V ~ 20 V -40°C ~ 125°C (TA) 8-SOIC (0.154",3.90mm Width) 8-SOIC Independent Half-Bridge 2 N-Channel MOSFET 200V 0.7V,2.5V 2A,2A