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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,188
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR DUAL 4A 8-SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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METAL SPIN OF NCD5703A. H
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
METAL SPIN OF NCD5703B. H
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
METAL SPIN OF NCD5703C. H
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER HALF BRIDGE 8SOIC
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Automotive，AEC-Q100 | 5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，25ns | 0.8V，2.7V | 300mA，600mA | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
METAL SPIN OF NCD5702. HI
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- | 5.5V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Half-Bridge | 1 | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 28V HALF 16QFN
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- | 4.5 V ~ 28 V | -40°C ~ 125°C (TJ) | 16-VFQFN Exposed Pad | 16-VQFN (3x3) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 15ns，13.5ns | 0.65V，1.4V | - | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR N-CH DUAL 8-SOIC
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- | 4.5 V ~ 13.2 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 16ns，16ns | 1.7V，2.2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR N-CH MOSFET 16MSOP
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- | 3.5 V ~ 135 V | -40°C ~ 125°C (TJ) | 16-TFSOP (0.118"，3.00mm Width) Exposed Pad，12 Leads | 16-MSOP | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | 90ns，40ns | - | - | |||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR DUAL 2A 8-SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 2A 8-SOIC
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- | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL INV 4A 8-SOIC
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL 4A CMOS 8MLP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
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- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 3A，3A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE SOT-23
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- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23 | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 40ns，28ns | 0.8V，2V | 500mA，500mA | |||
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ON Semiconductor |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRVR DUAL NONINV 4A 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
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|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 4A 8-MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | - | 5A，5A | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 0.5A SINGLE 2X2 QF
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-DFN (2x2) | Surface Mount | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 40ns，28ns | 0.8V，2V | 500mA，500mA |
