- Fabricant:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 1,188
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
435
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 10-DFN
|
- | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2.2V | 1.5A,1A | ||||
Microchip Technology |
954
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A L-SIDE 8SOIC
|
Automotive,AEC-Q100 | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
905
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8-SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 11ns,11ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
426
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 85V HALF BRDG
|
- | 5.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 108V | 20ns,20ns | 0.8V,2.2V | 1A,1A | ||||
Microchip Technology |
752
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8MSOP
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 4.5A DUAL 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 16-SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
ON Semiconductor |
401
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER GATE SINGLE IGBT 8SOIC
|
- | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 17ns,17ns | 1.2V,3.2V | 1A,2A | ||||
ON Semiconductor |
161
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Automotive,AEC-Q100 | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | 0.8V,2V | 3A,3A | ||||
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 16-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
519
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 16SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 15ns,15ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET HISIDE HS 8SOIC
|
- | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | - | 400ns,400ns | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH-SIDE DVR HS HV TSOT23-6
|
- | 4 V ~ 15 V | -40°C ~ 125°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | TSOT-23-6 | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 80V | 10ns,7ns | 1.3V,1.6V | 2.4A,2.4A | ||||
Linear Technology/Analog Devices |
6
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8SOIC
|
- | 8 V ~ 48 V | -40°C ~ 85°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC LDO REG W/SD 5V 16-SOIC
|
- | - | - | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | - | - | - | - | - | - | - | - | - | ||||
Linear Technology/Analog Devices |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER NCH QUAD 20SOIC
|
- | - | - | 20-SOIC (0.295",7.50mm Width) | 20-SOIC | Surface Mount | - | - | - | - | - | - | - | - | - | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns,9ns | - | 3A,3A | ||||
ON Semiconductor |
20
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER BUCK DUAL 8SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 140°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 8ns,8ns | 1.2V,1.8V | 5A,5A | ||||
ROHM Semiconductor |
21
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
600V HIGH VOLTAGE HIGH & LOW-SID
|
- | - | - | 8-SOIC (0.173",4.40mm Width) | 8-SOP | Surface Mount | - | - | - | - | - | - | - | - | - |