- Fabricant：
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- Series：
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- Voltage - Supply：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 1,188
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
3,275
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
|
|
Microchip Technology |
3,265
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
|
|
Microchip Technology |
2,499
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-SIDE MOSFET DRIVER
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) | 8-MSOP | Surface Mount | Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
|
|
ON Semiconductor |
2,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
|
- | - | - | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
2,345
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | - | 500mA，1A | |||
|
|
ON Semiconductor |
1,995
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HALF BRIDGE DVR HV OSC 8SOIC
|
- | 8 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 40ns，20ns | - | 500mA，1A | |||
|
|
Microchip Technology |
3,270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
4.5A MATCHED，HIGH -SPEED，LOW-S
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WFDFN Exposed Pad | 8-TDFN (2x3) | Surface Mount | Inverting，Non-Inverting | Single | Low-Side | 2 | IGBT | - | 12ns，12ns | 0.8V，2V | 4.5A，4.5A | |||
|
|
Microchip Technology |
1,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 85V 8-SOIC
|
- | 5.25 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1A | |||
|
|
ON Semiconductor |
3,265
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 3A，3A | |||
|
|
ROHM Semiconductor |
2,188
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR IGBT/MOSFET
|
- | 10 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.173"，4.40mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 600V | 200ns，100ns | 1V，2.6V | 60mA，130mA | |||
|
|
Microchip Technology |
3,289
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
3,288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Microchip Technology |
3,229
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DL HS 8-SOIC
|
- | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
3,147
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,978
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,958
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
2,895
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
ON Semiconductor |
2,847
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 4A HS 8MLP
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-WDFN Exposed Pad | 8-MLP (3x3) | Surface Mount | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | |||
|
|
Microchip Technology |
2,828
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
ON Semiconductor |
2,779
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
LOW-COST HIGH VOLTAGE DUA
|
- | - | - | 8-VFDFN Exposed Pad | 8-DFN (2x2) | Surface Mount | - | - | - | - | - | - | - | - | - |
