Voltage - Supply:
Package / Case:
Supplier Device Package:
Rise / Fall Time (Typ):
Découvrez les produits 4,485
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
MAX4427MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX626MJA/883B
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 25ns,20ns 0.8V,2.4V 2A,2A
MAX627MJA/883B
Maxim Integrated
Enquête
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-
MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 25ns,20ns 0.8V,2.4V 2A,2A
TSC427MJA/883B
Maxim Integrated
Enquête
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-
MOQ: 50  MPQ: 1
IC DRIVER MOSFET COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Through Hole Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET 25ns,25ns 0.8V,2.4V 1.5A,1.5A
MIC4478YME-T5
Microchip Technology
Enquête
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-
MOQ: 500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YME-T5
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Cut Tape (CT) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YME-T5
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
- - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YME-TR
Microchip Technology
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YME-TR
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Cut Tape (CT) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YME-TR
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
- - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4479YME-TR
Microchip Technology
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 32V INV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4479YME-TR
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V INV 8SOIC
Cut Tape (CT) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4479YME-TR
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V INV 8SOIC
- - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4480YME-T5
Microchip Technology
Enquête
-
-
MOQ: 500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4480YME-T5
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Cut Tape (CT) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4480YME-T5
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
- - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4480YME-TR
Microchip Technology
Enquête
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-
MOQ: 2500  MPQ: 1
IC MOSFET DVR 32V NONINV 8SOIC
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) Exposed Pad 8-SOIC-EP Surface Mount Inverting,Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YM-T5
Microchip Technology
Enquête
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MOQ: 500  MPQ: 1
IC DRIVER MOSF QUAD
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4478YM-TR
Microchip Technology
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRIVER MOSF QUAD
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A
MIC4479YM-T5
Microchip Technology
Enquête
-
-
MOQ: 500  MPQ: 1
IC DRIVER MOSF QUAD
Tape & Reel (TR) - 4.5 V ~ 32 V -40°C ~ 125°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Inverting Independent Low-Side 2 N-Channel MOSFET 120ns,45ns 0.8V,2.4V 2.5A,2.5A