- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 151
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
11,569
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Non-Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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Texas Instruments |
24,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Texas Instruments |
25,232
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
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Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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Texas Instruments |
25,232
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LO-SIDE DL 5A 8SON
|
- | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-SON (3x3) | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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|
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ON Semiconductor |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
|
ON Semiconductor |
4,110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-MLP
|
- | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-MLP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | 3A，3A | ||
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|
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ON Semiconductor |
18,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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|
|
ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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ON Semiconductor |
18,976
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR SGL 9A LOSIDE 8-MLP
|
- | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-MLP (3x3) | Non-Inverting | Single | 1 | N-Channel MOSFET | 23ns，19ns | 0.8V，2V | 10.6A，11.4A | ||
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Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
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Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
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Maxim Integrated |
5,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting | Independent | 2 | N-Channel MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
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Maxim Integrated |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Tape & Reel (TR) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | IGBT，SiC MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
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Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
Cut Tape (CT) | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | IGBT，SiC MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
|
|
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Maxim Integrated |
4,800
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 4A DUAL 8TDFN
|
- | - | 4 V ~ 14 V | -40°C ~ 150°C (TJ) | 8-TDFN-EP (3x3) | Inverting，Non-Inverting | Independent | 2 | IGBT，SiC MOSFET | 40ns，25ns | 2V，4.25V | 4A，4A | ||
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|
|
Infineon Technologies |
4,000
|
3 jours |
-
|
MOQ: 4000 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Tape & Reel (TR) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-WSON-8-1 | Non-Inverting | Independent | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | 5A，5A | ||
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|
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Infineon Technologies |
6,404
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER 8WSON
|
Cut Tape (CT) | EiceDriver | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | PG-WSON-8-1 | Non-Inverting | Independent | 2 | N-Channel MOSFET | 5.3ns，4.5ns | - | 5A，5A |
